Atomera extends Synopsys collaboration to accelerate GaN device modeling for RF, power chips
PUBT · 1d ago
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- Atomera expanded collaboration with Synopsys to advance gallium nitride device modeling for RF and power semiconductor applications.
- Partnership extends existing work on Synopsys Sentaurus TCAD and Atomera MSTcad into GaN workflows.
- Atomera will develop GaN calibration methodology for TCAD, create calibrated TCAD decks, and provide product feedback to Synopsys.
- Companies aim to speed development of next-generation GaN devices by combining Atomera MST films with Synopsys simulation tools.
Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Atomera Inc. published the original content used to generate this news brief via Business Wire (Ref. ID: 202604231605BIZWIRE_USPR_____20260423_BW812031) on April 23, 2026, and is solely responsible for the information contained therein.
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