CVD Equipment grows low-defect 4H silicon carbide single-crystal boule on PVT system
PUBT · 04/21 20:15
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- CVD Equipment demonstrated growth of single-crystal silicon carbide boules using its Physical Vapor Transport systems in collaboration with Stony Brook University.
- Stony Brook University characterization found 4H crystal structure with no polytypes, citing low defect density.
- Results support Stony Brook’s onsemi Research Center for Wide Bandgap Materials, positioning CVD Equipment for wider adoption in next-generation semiconductor manufacturing.
Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. CVD Equipment Corporation published the original content used to generate this news brief on April 21, 2026, and is solely responsible for the information contained therein.
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